N3_stm32/N3Drive/USER/flash.c

#include "flash.h"

u32 STMFLASH_ReadWord(u32 faddr)
{
	return *(vu32*)faddr;
}

float ReadFloatWord(u32 faddr)
{
	return *(float*)faddr;
}

uint16_t STMFLASH_GetFlashSector(u32 addr)
{
	if(addr<ADDR_FLASH_SECTOR_1)return FLASH_Sector_0;
	else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_Sector_1;
	else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_Sector_2;
	else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_Sector_3;
	else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_Sector_4;
	else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_Sector_5;
	else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_Sector_6;
	else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_Sector_7;
	else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_Sector_8;
	else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_Sector_9;
	else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_Sector_10; 
	return FLASH_Sector_11;	
}

void STMFLASH_Write(u32 WriteAddr,u32 *pBuffer,u32 NumToWrite)	
{
  FLASH_Status status = FLASH_COMPLETE;
	u32 addrx=0;
	u32 endaddr=0;
  if(WriteAddr<STM32_FLASH_BASE1||WriteAddr%4)return;	//非法地址
	
	FLASH_Unlock();									//解锁 
  FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
 	
	addrx=WriteAddr;				//写入的起始地址
	endaddr=WriteAddr+NumToWrite*4;	//写入的结束地址

	if(addrx<0X1FFF0000)			//只有主存储区,才需要执行擦除操作!!
	{
		while(addrx<endaddr)		//扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
		{
			if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
			{   
				status=FLASH_EraseSector(STMFLASH_GetFlashSector(addrx),VoltageRange_3);//VCC=2.7~3.6V之间!!
				if(status!=FLASH_COMPLETE)break;	//发生错误了
			}else addrx+=4;
		}
	}

	if(status==FLASH_COMPLETE)
	{
		while(WriteAddr<endaddr)//写数据
		{
			if(FLASH_ProgramWord(WriteAddr,*pBuffer)!=FLASH_COMPLETE)//写入数据
			{
				break;	//写入异常
			}
			WriteAddr+=4;
			pBuffer++;
		}
	}
  FLASH_DataCacheCmd(ENABLE);	//FLASH擦除结束,开启数据缓存
	FLASH_Lock();//上锁
}

void STMFLASH_Read(u32 ReadAddr,u32 *pBuffer,u32 NumToRead)   	
{
	u32 i;
	for(i=0;i<NumToRead;i++)
	{
		pBuffer[i]=STMFLASH_ReadWord(ReadAddr);//读取4个字节.
		ReadAddr+=4;//偏移4个字节.	
	}
}